PIR Sensor

Dual element pyroelectric infrared sensor RE200B
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Product Code
$2.00 (GST-exclusive)

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Sensitive element area of 2.0 × 1.0mm2
Silicon substrate material
Substrate thickness 0.5mm
Wavelength 7-14μm
Average transmittance of> 75%
Output signal> 2.5V
(420 ° k blackbody modulation frequency 0.3-3.0Hz 1Hz bandwidth of 72.5db gain)
Noise <200mV
(mVp-p) (25 °C)
Balance <20%
Operating voltage 2.2-15V
Operating Current 8.5-24μA
(VD = 10V, Rs = 47kΩ, 25 °C)
Source voltage of 0.4-1.1V
(VD = 10V, Rs = 47kΩ, 25 °C)
Operating temperature -20 °C - +70 °C
Storage temperature -35 °C - +80 °C
Field of view 139 ° × 126 °

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